© The Institution of Engineering and Technology
It is demonstrated that a nanoscale multilevel memristive device using titanium oxide can be used to form programmable analogue circuits without an active transistor. A multilevel memristive device enables a high a degree of programmability particularly for analogue applications since it will not introduce any significant parasitic components. Also, the ring oscillator application with the memristive device is merely a demonstrative example of the enabled high programmability.
References
-
-
1)
-
S. Shin ,
K. Kim ,
S.-M. Kang
.
Reconfigurable stateful NOR gate for large- scale logic array integrations.
IEEE Trans. Circuits Syst. II
,
7 ,
442 -
446
-
2)
-
L.O. Chua ,
S.M. Kang
.
Memristive devices and systems.
Proc. IEEE
,
2 ,
209 -
223
-
3)
-
K.H. Kim ,
S. Gaba ,
D. Wheeler ,
J.M. Cruz-Albrecht ,
T. Hussain ,
N. Srinivasa ,
W. Lu
.
A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.
Nano Lett
-
4)
-
J. Borghetti
.
Memristive switches enable “stateful” logic operations via material implication.
Nature
,
873 -
875
-
5)
-
S. Park ,
J. Shin ,
S. Cimino ,
S. Jung ,
J. Lee ,
S. Kim ,
J. Park ,
W. Lee ,
M. Son ,
B. Lee ,
L. Pantisano ,
H. Hwang
.
Feasibility study of Mo/SiOx/Pt resistive random access memory in inverter circuit for FPGA applications.
IEEE Electron Device Lett.
,
12
-
6)
-
S. Shin ,
K. Kim ,
S.-M. Kang
.
Memristor applications for programmable analog ICs.
IEEE Trans. Nanotechnol.
,
2 ,
266 -
274
-
7)
-
D.B. Strukov ,
G.S. Snider ,
D.R. Stewart ,
R.S. Williams
.
The missing memristor found.
Nature
,
80 -
83
-
8)
-
H. Choi ,
H. Jung ,
J. Lee ,
J. Yoon ,
J. Park ,
D.-J. Seong ,
W. Lee ,
M. Hasan ,
G.-Y. Jung ,
H. Hwang
.
An electrically modifiable synapse array of resistive switching memory.
Nanotechnology
,
34
-
9)
-
Y.V. Pershin ,
M. Di Ventra
.
Practical approach to programmable analog circuits with memristors.
IEEE Trans. Circuits Syst. I
-
10)
-
L.O. Chua
.
Memristor – the missing circuit element.
IEEE Trans. Circuit Theory
,
507 -
519
-
11)
-
S.H. Jo ,
K.-H. Kim ,
W. Lu
.
High-density crossbar arrays based on a Si memristive system.
Nano Lett.
,
2 ,
870 -
874
-
12)
-
S. Shin ,
K. Kim ,
S.-M. Kang
.
Compact models for memristors based on charge-flux constitutive relationships.
IEEE Trans. Comput.-Aided Des. Circuits Syst.
,
4 ,
590 -
598
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.3179
Related content
content/journals/10.1049/el.2012.3179
pub_keyword,iet_inspecKeyword,pub_concept
6
6