56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s
56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s
- Author(s): P. Moser ; J.A. Lott ; P. Wolf ; G. Larisch ; H. Li ; N.N. Ledentsov ; D. Bimberg
- DOI: 10.1049/el.2012.2944
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): P. Moser 1 ; J.A. Lott 2 ; P. Wolf 1 ; G. Larisch 1 ; H. Li 1 ; N.N. Ledentsov 2 ; D. Bimberg 1
-
-
View affiliations
-
Affiliations:
1: Institut für Festkörperphysik und Zentrum für Nanophotonik, Technische Universität Berlin, Berlin, Germany
2: Institut für Festkörperphysik und Zentrum für Nanophotonik, VI Systems GmbH, Berlin, Germany
-
Affiliations:
1: Institut für Festkörperphysik und Zentrum für Nanophotonik, Technische Universität Berlin, Berlin, Germany
- Source:
Volume 48, Issue 20,
27 September 2012,
p.
1292 – 1294
DOI: 10.1049/el.2012.2944 , Print ISSN 0013-5194, Online ISSN 1350-911X
A new record for energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting lasers is presented. Such VCSELs are particularly suited for optical interconnects. Error-free performance at 25 Gbit/s is achieved with 56 fJ/bit of dissipated energy per quantum of information. The influence of variations of the oxide-aperture diameter on the energy-efficiency is determined. The presented singlemode devices are more energy-efficient than similar multimode ones.
Inspec keywords: optical interconnections; quantum optics; surface emitting lasers
Other keywords:
Subjects: Semiconductor lasers; Quantum optics; Optical computers, logic elements, and interconnects; Design of specific laser systems; Lasing action in semiconductors; Laser resonators and cavities; Laser resonators and cavities; Metallisation and interconnection technology
References
-
-
1)
- S. Imai , K. Takaki , S. Kamiya , J. Yoshida , Y. Kawakita , T. Takagi , K. Hiraiwa , H. Shimizu , T. Suzuki , N. Iwai , T. Ishikawa , N. Tsukiji , A. Kasukawa . Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection. IEEE J. Sel. Tops. Quantum Electron. , 6 , 1614 - 1620
-
2)
- P. Moser , W. Hofmann , P. Wolf , J.A. Lott , G. Larisch , A. Payusov , N.N. Ledentsov , D. Bimberg . 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects. Appl. Phys. Lett. , 23
-
3)
- P. Moser , J.A. Lott , P. Wolf , G. Larisch , A. Payusov , N.N. Ledentsov , W. Hofmann , D. Bimberg . 99 fJ/(bit km) energy to data-distance ratio at 17 Gb/s across 1 km of multimode optical fiber with 850-nm single-mode VCSELs. IEEE Photonics Technol. Lett. , 1 , 19 - 21
-
4)
- Kash, J.A., Benner, A.F., Doany, F.E., Kuchta, D.M., Lee, B.G., Pepeljugoski, P.K., Petar, K., Schares, L., Schow, C.L., Taubenblatt, M.A.: `Optical interconnects in exascale supercomputers', 23rdAnnual Meeting of IEEE Photonics Society, November 2010, Denver, CO, USA, p. 483–484.
-
5)
- P. Wolf , P. Moser , G. Larisch , M. Kroh , A. Mutig , W. Unrau , W. Hofmann , D. Bimberg . High-performance 980 nm VCSELs for 12.5 Gbit/s data transmission at 155°C and 49 Gbit/s at −14°C. Electron. Lett. , 7 , 389 - 390
-
6)
- International Technology Roadmap for Semiconductors, 2007 Edition, http://www.itrs.net/Links/2007ITRS/ExecSum2007.pdf.
-
7)
- Lott, J.A., Moser, P., Payusov, A., Blokhin, S.A., Wolf, P., Larisch, G., Ledentsov, N.N., Bimberg, D.: `Energy efficient 850 nm VCSELs operating error-free at 25 Gb/s over multimode optical fiber up to 600 m', IEEE Optical Interconnects Conf., May 2012, Santa Fe, NM, USA, p. 1.
-
8)
- Hawkins, B., Hawthorne, R., Guenter, J., Tatum, J., Biard, J.: `Reliability of various size oxide aperture VCSELs', 52ndElectronic Components and Technology Conf., May 2002, San Diego, CA, USA, p. 540–550.
-
9)
- D.A.B. Miller . Device requirements for optical interconnects to silicon chips. Proc. IEEE , 7 , 1166 - 1185
-
10)
- M.A. Taubenblatt . Optical interconnects for high-performance computing. J. Lightwave Technol. , 4 , 448 - 457
-
11)
- Shi, J.-W., Weng, W.-C., Kuo, F.-M., Chyi, J.-I., Pinches, S., Geen, M., Joel, A.: `Oxide-relief vertical-cavity surface-emitting lasers with extremely high data-rate/power-dissipation ratios', Optical Fiber Communication Conf. and Exposition (OFC) and National Fiber Optic Engineers Conf. (NFOEC), March 2011, Los Angeles, CA, USA, p. 1–3.
-
1)
Related content
