Carrier transport properties of Mg-doped InAlN films

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Carrier transport properties of Mg-doped InAlN films

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The carrier transport properties of 100 nm-thick Mg-doped InAlN films were investigated using a transmission line model. The electrical resistivity of InAlN:Mg films was 7400 Ωcm, indicating a semi-insulator. Temperature-dependent current-voltage measurements revealed that the predominant carrier transport is due to hopping conduction through deep-level defect states. The carrier transport at the metal contact/InAlN:Mg interface could be explained in terms of hopping conduction through deep-level states located 1.28 eV above the valence band.

Inspec keywords: magnesium; deep levels; indium compounds; electrical resistivity; hopping conduction; III-V semiconductors; aluminium compounds; defect states; semiconductor thin films; semiconductor-metal boundaries; wide band gap semiconductors; valence bands

Other keywords: metal contact-semiconductor interface; semiinsulator property; carrier transport properties; transmission line model; valence band; InAlN:Mg; electrical resistivity; hopping conduction; size 100 nm; deep-level defect states; temperature-dependent current-voltage property

Subjects: Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor-metal interfaces; Electrical properties of metal-nonmetal contacts; Impurity and defect levels in II-VI and III-V semiconductors; II-VI and III-V semiconductors; Electronic structure of crystalline semiconductor compounds and insulators

References

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      • H. Morkoç . (2009) Handbook of nitride semiconductors and devices.
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