Highly reproducible tunnel currents in MBE-grown semiconductor multilayers

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Highly reproducible tunnel currents in MBE-grown semiconductor multilayers

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Tunnel currents through semiconductor tunnel barriers have proved very difficult to control to the extent that device-to-device variability and wafer-to-wafer irreproducibility have prevented electronic devices based on tunnelling from ever going into production. With reference to a single tunnel barrier of AlAs in a GaAs multilayer structure with an asymmetric doping profile, it is shown that, with careful attention to detail, diodes from equivalent sites on three separate wafers can be produced whose average current in forward bias is within 1 % while the total in-wafer standard deviation of current at the same fixed bias (0.5 V) is 6 %, dominated by a systematic cross-wafer variation that is described. This level of reproducibility now enables these devices to be used in pick-and-place systems for the manufacture of low-cost hybrid integrated microwave circuits.

Inspec keywords: aluminium compounds; tunnelling; semiconductor doping; doping profiles; multilayers; molecular beam epitaxial growth; silicon; elemental semiconductors; semiconductor epitaxial layers; III-V semiconductors; tunnel diodes; gallium arsenide; semiconductor growth

Other keywords: asymmetric doping profile; pick-and-place systems; systematic cross-wafer variation; device-to-device variability; highly reproducible tunnel currents; semiconductor tunnel barriers; wafer-to-wafer irreproducibility; electronic devices; AlAs-GaAs:Si; voltage 0.5 V; total in-wafer standard deviation; MBE-grown semiconductor multilayers; low-cost hybrid integrated microwave circuits; single tunnel barrier; tunnel diodes

Subjects: Doping and implantation of impurities; Semiconductor doping; Low-dimensional structures: growth, structure and nonelectronic properties; Other semiconductor interfaces and junctions; Thin film growth, structure, and epitaxy; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Tunnelling: general (electronic transport); Vacuum deposition; Vacuum deposition; Semiconductor superlattices, quantum wells and related structures; Impurity concentration, distribution, and gradients; Junction and barrier diodes; II-VI and III-V semiconductors; Electron states in low-dimensional structures

References

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      • L. Eaves , M.J. (Eds) Kelly . The current status of semiconductor tunnelling devices. Phil. Trans. Roy. Soc. , 2289 - 2467
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