Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser
Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser
- Author(s): S.M. Chen ; K.J. Zhou ; Z.Y. Zhang ; O. Wada ; D.T.D. Childs ; M. Hugues ; X. Jin ; R.A. Hogg
- DOI: 10.1049/el.2012.0710
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- Author(s): S.M. Chen 1 ; K.J. Zhou 1 ; Z.Y. Zhang 1, 2 ; O. Wada 3 ; D.T.D. Childs 1 ; M. Hugues 2 ; X. Jin 1 ; R.A. Hogg 1, 2
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View affiliations
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Affiliations:
1: Department of Electronic Engineering, University of Sheffield, Sheffield, United Kingdom
2: EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield, United Kingdom
3: Center for Collaborative Research and Technology Development (CREATE), Kobe University, Nada, Japan
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Affiliations:
1: Department of Electronic Engineering, University of Sheffield, Sheffield, United Kingdom
- Source:
Volume 48, Issue 11,
24 May 2012,
p.
644 – 645
DOI: 10.1049/el.2012.0710 , Print ISSN 0013-5194, Online ISSN 1350-911X
A hybrid quantum well/quantum dot active region is used to obtain simultaneous three-state lasing at room temperature, via ground state and first excited state transitions of the quantum dots and the lowest energy transition of a single quantum well. The device exhibits a threshold current density of 1125 A/cm2 for achieving simultaneous three-state lasing over ∼160 nm.
Inspec keywords: current density; quantum well lasers; quantum dot lasers
Other keywords:
Subjects: Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems
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