VHF monolithically integrated CMOS-MEMS longitudinal bulk acoustic resonator

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VHF monolithically integrated CMOS-MEMS longitudinal bulk acoustic resonator

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Presented is a fully integrated solution on CMOS technology for achieving a longitudinal bulk acoustic wave microelectromechanical resonator. The capacitive polysilicon module present in the AMS 0.35 µm commercial CMOS technology is used to implement a longitudinal bar with a gap of 40 nm using the interpoly oxide as spacer. Measurements, in air, show a resonance frequency of 258 MHz.

Inspec keywords: CMOS analogue integrated circuits; acoustic resonators; micromechanical resonators

Other keywords: longitudinal bulk acoustic wave microelectromechanical resonator; VHF monolithically integrated CMOS-MEMS longitudinal bulk acoustic resonator; size 0.35 mum; size 40 nm; frequency 2.58 MHz

Subjects: MEMS and NEMS device technology; CMOS integrated circuits; Microsensors and nanosensors; Acoustic wave devices

References

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      • Teva, J., Abadal, G., Uranga, A., Verd, J., Torres, F., Lopez, J.L., Esteve, J., Perez-Murane, F., Barnio, N.: `From VHF to UHF CMOS-MEMS monolithically integrated resonators', IEEE 21st Int. Conf. on Micro Electro Mechanical Systems (MEMS 2008), 2008, Tucson, AZ, USA.
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      • Li-Wen, H., Nguyne, C.T.C., Xie, Y., Lin, Y.-W., Li, S.-S., Ren, Z.: `UHF micromechanica. compound-(2,4) mode ring resonators with solid-gap. transducers', Frequency Control. Symp., Joint. with the 21st European, IEEE Int. Frequency and Time Forum, Geneva, May/June 2007, Switzerland.
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