http://iet.metastore.ingenta.com
1887

access icon free Studied variations

  • PDF
    370.8056640625Kb

An IBM semiconductor R&D team have reported the effects of a SiGe channel on threshold voltage mismatch in a 32 nm high-k metal gate (HKMG) technology. They have found that the improved threshold voltage comes at an acceptable cost in terms of transistor mismatch.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.0518
Loading

Related content

content/journals/10.1049/el.2012.0518
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
See Also
This article has the following associated article(s):
Effect of SiGe channel on pFET variability in 32 nm technology
This is a required field
Please enter a valid email address