Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory

Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory

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Solid electrolytes with a small on-state resistance enable a large read margin and high speed for programmable metallisation cell memory devices. It has been believed that the increase of control current is the only effective method of on-state resistance reduction, but it does not reflect a requirement for low power consumption. Proposed is a new approach to reduce on-state resistance while maintaining the control current. It was found that nitrogen doping into the SbTe chalcogenide glass, constituting solid electrolytes, decreased on-state resistance and stabilised the switching characteristics of the fabricated devices. The nitrogen-doped SbTe chalcogenide glass formed into the solid electrolyte of a small thickness, which resulted in reduced on-state resistance.


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      • Sakamoto, T., Banno, N., Iguchi, N., Kawaura, H., Sunamura, H., Fujieda, S., Terabe, K., Hasegawa, T., Aono, M.: `Ta', Proc. of IEEE Symp. VLSI Technology, 2007, Kyoto, Japan.
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