http://iet.metastore.ingenta.com
1887

Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory

Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Solid electrolytes with a small on-state resistance enable a large read margin and high speed for programmable metallisation cell memory devices. It has been believed that the increase of control current is the only effective method of on-state resistance reduction, but it does not reflect a requirement for low power consumption. Proposed is a new approach to reduce on-state resistance while maintaining the control current. It was found that nitrogen doping into the SbTe chalcogenide glass, constituting solid electrolytes, decreased on-state resistance and stabilised the switching characteristics of the fabricated devices. The nitrogen-doped SbTe chalcogenide glass formed into the solid electrolyte of a small thickness, which resulted in reduced on-state resistance.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
      • http://www.axontc.com.
    5. 5)
    6. 6)
      • Sakamoto, T., Banno, N., Iguchi, N., Kawaura, H., Sunamura, H., Fujieda, S., Terabe, K., Hasegawa, T., Aono, M.: `Ta', Proc. of IEEE Symp. VLSI Technology, 2007, Kyoto, Japan.
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.0308
Loading

Related content

content/journals/10.1049/el.2012.0308
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address