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Fabrication of In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diodes grown on InP by molecular beam epitaxy

Fabrication of In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diodes grown on InP by molecular beam epitaxy

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An In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diode (RTD) has been fabricated by molecular beam epitaxy on InP substrates for the first time. A clear negative differential resistance (NDR) characteristic was observed at room temperature, where the peak/valley (P/V) ratio is as high as 19.6. This result indicates that the use of an InGaAsN layer in the RTD structure is very effective on obtaining an NDR characteristic with high P/V ratio.

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      • Ouchi, K., Kawamura, Y., Amano, M., Inoue, N.: `Optical control of InGaAs/GaAsSb type II resonant tunnelling diodes', Proc.11th Int.Conf. on MSS, 2003, Nara, Japan, (PB62).
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.0186
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