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Investigation of relationship between 2DEG density and reverse leakage current in AlGaN/GaN Schottky barrier diodes

Investigation of relationship between 2DEG density and reverse leakage current in AlGaN/GaN Schottky barrier diodes

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The influence of the density of two-dimensional electron gas (ns) formed in AlGaN/GaN-based planar Schottky barrier diodes (SBDs) on the reverse leakage current (IR) was investigated by fabricating SBDs with three different AlN mole fractions in the AlGaN layers. It was found that IR decreased exponentially with the reduction of ns; e.g. IR decreased by seven orders of magnitude simply by reducing ns from 1.0×1013 to 3.6×1012 cm−2.

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      • S.M. Sze . (1981) Physics of semiconductor devices.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2011.3919
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