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Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 µm SiGe BiCMOS

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 µm SiGe BiCMOS

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  • Author(s): Bo Zhang 1 ; Yong-Zhong Xiong 2 ; Lei Wang 3 ; Sangming Hu 4 ; Le-Wei Li 3
    • View affiliations
    • Affiliations: 1: Xi'an University of Posts and Telecommunications, Xi'an, People's Republic of China
      2: Microarray Technology, Chengdu, People's Republic of China
      3: University of Electronic Science and Technology of China, Chengdu, People's Republic of China
      4: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore
  • Source: Volume 48, Issue 5, 1 March 2012, p. 257 – 259
    DOI:  10.1049/el.2011.3882 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published

A 132–160 GHz low-noise amplifier (LNA) in 0.13 µm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 × 900 µm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of 8.5 dB at 145 GHz, with total DC power consumption of 14.5 mW.

Inspec keywords: BiCMOS analogue integrated circuits; Ge-Si alloys; semiconductor materials; field effect MIMIC; low noise amplifiers

Other keywords: noise figure 8.5 dB; SiGe; LNA; 3D grounded-shielding structures; silicon-germanium BiCMOS; power 14.5 mW; DC power consumption; frequency 132 GHz to 160 GHz; gain-boosting technique; gain-enhanced low-noise amplifier; gain 21 dB; bandwidth 28 GHz; size 0.13 mum; silicon occupation

Subjects: CMOS integrated circuits; Amplifiers; Mixed technology integrated circuits; Microwave integrated circuits

References

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      • Chevalier, P., Barbalat, B., Laurens, M., Vandelle, B., Rubaldo, L., Geynet, B., Voinigescu, S.P., Dickson, T.O., Zerounian, N., Chouteau, S., Dutartre, D., Monroy, A., Aniel, F., Dambrine, G., Chantre, A.: `High-speed SiGe BiCMOS technologies: 120-nm status and end-of-roadmap challenges', IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, January 2007, Long Beach, CA, USA, p. 18–23.
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      • S.M. Sze . (1990) High-speed semiconductor devices.
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