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Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 µm SiGe BiCMOS

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 µm SiGe BiCMOS

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A 132–160 GHz low-noise amplifier (LNA) in 0.13 µm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 × 900 µm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of 8.5 dB at 145 GHz, with total DC power consumption of 14.5 mW.

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2011.3882
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