Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 µm SiGe BiCMOS

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 µm SiGe BiCMOS

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A 132–160 GHz low-noise amplifier (LNA) in 0.13 µm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 × 900 µm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of 8.5 dB at 145 GHz, with total DC power consumption of 14.5 mW.


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      • Chevalier, P., Barbalat, B., Laurens, M., Vandelle, B., Rubaldo, L., Geynet, B., Voinigescu, S.P., Dickson, T.O., Zerounian, N., Chouteau, S., Dutartre, D., Monroy, A., Aniel, F., Dambrine, G., Chantre, A.: `High-speed SiGe BiCMOS technologies: 120-nm status and end-of-roadmap challenges', IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, January 2007, Long Beach, CA, USA, p. 18–23.
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