Effect of SiGe channel on pFET variability in 32 nm technology

Effect of SiGe channel on pFET variability in 32 nm technology

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The effect of a silicon germanium (SiGe) channel on pFET threshold voltage (VTH) mismatch in 32 nm high-K/metal-gate (HKMG) process is characterised. Additional variability is observed in the SiGe-channel pFET as compared with the traditional pFET with a silicon (Si) channel. Despite the extra VTH mismatch introduced by the SiGe channel, the traditional mismatch figure of merit from a Pelgrom plot (AVT) continuously scales down as technology advances from poly/SiON to HKMG process.


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