4+1-transistor pixel architecture for high-speed, high-resolution CMOS image sensors

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4+1-transistor pixel architecture for high-speed, high-resolution CMOS image sensors

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A pixel architecture is introduced which allows a drastic reduction of the column capacitance of a monolithic pixel array. It consists of a classic 4T pixel architecture together with an extra switch added at regular positions in the column array and shared by a group of pixels of the column. In this way, each pixel will see an output capacitance proportional to the number of pixels sharing the extra switch and the total number of extra switches.

Inspec keywords: CMOS image sensors; MOSFET; image resolution

Other keywords: column capacitance reduction; CMOS image sensor; column array; classic 4T pixel architecture; transistor pixel architecture; monolithic pixel array; output capacitance

Subjects: Optical, image and video signal processing; Image sensors; CMOS integrated circuits; Insulated gate field effect transistors

References

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    2. 2)
      • Ishikawa, M.: `New application areas made possible by high speed vision', Proc. Int. Image Sensing Workshop, June 2011, Hokkaido, Japan.
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    4. 4)
      • Meynants, G., Lepage, G., Bogaerts, J., Vanhorebeek, G., Wang, X.: `Limitations to the frame rate of high speed image sensors', Int. Image Sensor Workshop, 2009, Bergen, Norway.
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