A flexible fully integrated transimpedance amplifier based on amorphous oxide semiconductor for use in system-on-panel has been built by researchers at the Swiss Federal Institute of Technology Zurich. Their device, made from an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and two a-IGZO TFT-based resistors integrated on a flexible substrate, can be bent to a radius of 5mm without significant degradation to the amplifier performance.