Integrated MEMS-tunable VCSELs with high modulation bandwidth

Integrated MEMS-tunable VCSELs with high modulation bandwidth

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The modulation bandwidth of micromachined tunable VCSELs is typically limited by the parasitic capacitance associated with the large mesa platform for the movable mirror. Presented is a simple technology for wafer-scale integration of tunable VCSELs with low mesa capacitance and high modulation bandwidth. Small signal measurements show a 3dB bandwidth of up to 6 GHz over a tuning range of 18 nm. Digital modulation is demonstrated with error-free data transmission at 5 Gbit/s and eye diagrams at 10 Gbit/s.


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      • Kögel, B., Abbaszadehbanaeiyan, A., Westbergh, P., Haglund, Å., Gustavsson, J., Bengtsson, J., Haglund, E., Frederiksen, H., Debernardi, P., Larsson, A.: `Integrated tunable VCSELs with simple MEMS technology', IEEE Int. Semiconductor Laser Conf. (ISLC), 2010, Kyoto, Japan
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