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Doping effect on shift of threshold voltage of graphene-based field-effect transistors

Doping effect on shift of threshold voltage of graphene-based field-effect transistors

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  • Author(s): B. Guo 1, 2 ; L. Fang 1 ; B. Zhang 2 ; J.R. Gong 2
    • View affiliations
    • Affiliations: 1: Department of Applied Physics, Chongqing University, Chongqing, People's Republic of China
      2: Laboratory for Nanodevices, National Center for Nanoscience and Technology, Beijing, People's Republic of China
  • Source: Volume 47, Issue 11, 26 May 2011, p. 663 – 664
    DOI:  10.1049/el.2011.0770 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
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A method of controllable doping by ion irradiation in reduced graphene oxide (RGO) is presented, and the threshold voltage of the RGO-based field-effect transistor can be finely tuned in the range from more than 30 V to about −20 V using this approach. Evidence of doping was also provided by Raman spectroscopy and Fourier transform infrared spectroscopy.

Inspec keywords: semiconductor doping; graphene; Raman spectroscopy; infrared spectra; field effect transistors; Fourier transform spectra

Other keywords: ion irradiation; threshold voltage; C; Fourier transform infrared spectroscopy; controllable doping; Raman spectroscopy; reduced graphene oxide; graphene-based field-effect transistor; doping effect

Subjects: Other field effect devices; Fullerene, nanotube and related devices; Semiconductor doping

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