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A new way to fabricate III-V devices on a glass substrate has been demonstrated by a team at Chalmers University of Technology in Sweden. Their epitaxial procedure, which uses anodic bonding, preserves the electrical characteristics of the device and shows great potential as a simple technique for integrated microwave and photonics applications.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.9086
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This article has the following associated article(s):
Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding