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Researchers at TriQuint Semiconductor in the US have developed a GaN high electron mobility transistor (HEMT) on Si substrate that can deliver an X-band power performance comparable to that of a standard GaN on SiC device. It has the highest power added efficiency (PAE) ever achieved for these devices: 65% at 10 GHz, and this result makes GaN on Si technology an attractive, cost-effective solution for several military and commercial applications, such as radar and wireless communications in the S- to X-band range (2–12 GHz).

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.9079
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content/journals/10.1049/el.2010.9079
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GaN on Si HEMT with 65% power added efficiency at 10 GHz
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