Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides

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Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides

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1000-times stable switching operation of an optical gate incorporating a Ge2Sb2Te5 thin film with Si wire waveguides is reported. The phase of the Ge2Sb2Te5 was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7 dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550 nm and 660 nm, respectively.

Inspec keywords: optical waveguides; silicon; laser beam effects; optical pulse generation; optical switches

Other keywords: pulsed laser irradiation; 1000-times switching; wavelength 1550 nm; wavelength 660 nm; phase change optical gate; amorphous state; wire waveguides

Subjects: Laser beam characteristics and interactions; Optical switches; Optical waveguides; Laser beam interactions and properties; Optical waveguides and couplers; Optical switches

References

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      • Toyosaki, T., Tanaka, D., Shoji, Y., Kuwahara, M., Wang, X., Kintaka, K., Kawashima, H., Ikuma, Y., Tsuda, H.: `Phase change characteristics of Ge', Photonics West, January 2011, San Francisco, CA, USA, (7943–05).
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Erratum for ‘Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides’