© The Institution of Engineering and Technology
A 1.2 µm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ∼80 nm bandwidth.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.3550
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content/journals/10.1049/el.2010.3550
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