High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 µm

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High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 µm

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A 1.2 µm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ∼80 nm bandwidth.

Inspec keywords: superluminescent diodes; semiconductor quantum dots; indium compounds; semiconductor doping; III-V semiconductors; annealing; gallium arsenide

Other keywords: superluminescent diodes; high power diode; InAs-InGaAs; post-growth annealing; wavelength 1.2 mum; intermixed p-doped quantum dot diodes

Subjects: Semiconductor superlattices, quantum wells and related structures; Annealing processes in semiconductor technology; Light emitting diodes

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