Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 µm

High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 µm

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Engineering and Technology
Published
Errata or comment

A 1.2 µm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ∼80 nm bandwidth.

Inspec keywords: superluminescent diodes; semiconductor quantum dots; indium compounds; semiconductor doping; III-V semiconductors; annealing; gallium arsenide

Other keywords: superluminescent diodes; high power diode; InAs-InGaAs; post-growth annealing; wavelength 1.2 mum; intermixed p-doped quantum dot diodes

Subjects: Semiconductor superlattices, quantum wells and related structures; Annealing processes in semiconductor technology; Light emitting diodes

References

    1. 1)
      • Z.Y. Zhang , Q. Jiang , R.A. Hogg . Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process. Appl. Phys. Lett
    2. 2)
    3. 3)
      • C.K. Chia , S.J. Chua , J.R. Dong , S.L. Teo . Ultrawide band quantum dot light emitting device by postfabrication laser annealing. Appl. Phys. Lett
    4. 4)
      • S.D. McDougall , O.P. Kowalski , J.H. Marsh , J.S. Aitchison . Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process. IEEE Photonics Technol. Lett.
    5. 5)
      • E. Salomatina , A.N. Yaroslavsky . Evaluation of the in vivo and ex vivo optical properties in a mouse ear model. Phys. Med. Biol.
    6. 6)
    7. 7)
    8. 8)
      • W. Drexler . Ultrahigh-resolution optical coherence tomography. J. Biomed. Opt
    9. 9)
    10. 10)
      • Z.Y. Zhang , Q. Jiang , I.J. Luxmoore , R.A. Hogg . A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap. Nanotechnology
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.3550
Loading

Related content

content/journals/10.1049/el.2010.3550
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
Intermix and match
Print this page
This is a required field
Please enter a valid email address