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Effects of fringing capacitor on ferroelectric phase shifter

Effects of fringing capacitor on ferroelectric phase shifter

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Two different devices topology are proposed to implement parallel-plate capacitors using Ba0.6Sr0.4TiO3 (BST) thin films. At 1 MHz frequency, the maximum tunability 1.3:1 is obtained with 32 V DC bias. The new topology capacitors have much higher tunability compared with conventional capacitors at the same total capacitance. Phase shifters, which are loaded variable structure capacitors have also been implemented. The circuits provide a maximum 190° and 262° phase shift at 18 GHz at room temperature.

References

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      • A. Tombak , J. Maria , F.T. Ayguavives , J. Zhang , G.T. Stauf , A.I. Kingon , A. Mortazawi . Tunable barium strontium titanate thin film capacitors for RF and microwave applications. IEEE Microw. Wirel. Compon. Lett. , 1 , 3 - 5
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      • F. De Flaviis , N.G. Alexopoulos , O.M. Stafsudd . Planar microwave integrated phase shifter design with high purity ferroelectric material. IEEE Trans. Microw. Theory Tech. , 963 - 969
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      • Van Keuls, F.W., Mueller, C.H., Miranda, F.A., Romanovsky, R.R., Canedy, C.L., Aggarwal, S., Venkatesan, T., Ramesh, R., Horwitz, J.S., Chang, W., Kim, W.: `Room temperature thin film Ba', IEEE MTT-S Int. Microw. Symp. Dig., June 1999, Anaheim, CA, USA, Anaheim Convention Centre,.
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      • B. Acikel , Y. Liu , A.S. Nagra , T.R. Taylor , P.J. Hansen , J.S. Speck , R.A. York . Phase-shifters using BaSrTiO3thin films on sapphire and glass substrate. IEEE MTT-S Int. Microw. Symp. Dig. , 1191 - 1194
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