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AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

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An AlGaN/GaN lateral field-effect rectifier with intrinsic ON-state current limiting capability is demonstrated by adding a Schottky contact metal (length of LD) beyond the ohmic contact region at the cathode electrode. The onset of the current limiting function is self-activated when the voltage drop across the two-dimensional gas (2DEG) channel under the Schottky contact reaches the pinch-off voltage of the as-grown AlGaN/GaN heterojunction. With LD=2 µm and a drift region length of 7 µm, the proposed lateral rectifier exhibited an ON-state current that was self-limited at 1.56 kA/cm2, while achieving a reverse breakdown voltage of 347 V at a 1mA/mm leakage current.

References

    1. 1)
      • J. Millan . Wide band-gap power semiconductor devices. IET Circuits Devices Syst. , 5 , 372 - 379
    2. 2)
      • Z.Z. Bandic , P.M. Bridger , E.C. Piquette , T.C. McGill , R.P. Vaudo , V.M. Phanse , J.M. Redwing . High voltage (450 V) GaN Schottky rectifiers. Appl. Phys. Lett. , 9 , 1266 - 1268
    3. 3)
    4. 4)
    5. 5)
      • W. Chen , K.Y. Wong , W. Huang , K.J. Chen . High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors. Appl. Phys. Lett. , 25
    6. 6)
      • W. Chen , K.Y. Wong , K.J. Chen . Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT. IEEE Electron Devices Lett. , 5 , 430 - 432
    7. 7)
      • Sanchez, J.L., Leturcq, Ph., Austin, P., Berriane, R., Breil, M., Anceau, C., Ayela, C.: `Design and fabrication of new high voltage current limiting devices for serial protection applications', Proc. Int. Symp. Power Semiconductor Devices ICs (ISPSD), May 1996, Hawaii, USA, p. 201–205.
    8. 8)
      • Godignon, P., Jorda, X., Millan, J., Deshayes, R., Sarrus, F., De Palma, J.F.: `Current limiting power device based on a 4 layer structure', IEEE Industry Applications Conf., October 1997, New Orleans, LA, USA, p. 1236–1240.
    9. 9)
      • D. Tournier , P. Godignon , J. Montserrat , D. Planson , C. Raynaud , J.P. Chante , J.F. de Palma , F. Sarrus . A 4H-SiC high-power-density VJFET as controlled current limiter. IEEE Trans. Ind. Appl. , 5 , 1508 - 1513
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