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A prototype Ge-Sb-Te thin-film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5–1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780°C and substrate temperature 250°C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterised by scanning electron microscopy and energy dispersive X-ray analysis. The CVD-grown Ge-Sb-Te thin film shows promise for phase change memory applications.
Inspec keywords: germanium; phase change memories; tellurium; scanning electron microscopy; selenium; X-ray chemical analysis; CVD coatings
Other keywords:
Subjects: Chemical vapour deposition; Thin film growth, structure, and epitaxy; Chemical vapour deposition; Memory circuits; Electron and ion microscopes and techniques; Electromagnetic radiation spectrometry (chemical analysis)