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The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Reducing the doping concentration of the top 150 nm portion of the n-type GaN layer by half decreases the tunnelling probability, resulting in decrease of the reverse leakage current by 80% at −10 V without deterioration of any forward electrical properties of LEDs.
Inspec keywords: wide band gap semiconductors; indium compounds; semiconductor doping; leakage currents; III-V semiconductors; tunnelling; gallium compounds; light emitting diodes
Other keywords:
Subjects: Light emitting diodes; Semiconductor doping; Semiconductor junctions and interfaces; Semiconductor theory, materials and properties