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The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Reducing the doping concentration of the top 150 nm portion of the n-type GaN layer by half decreases the tunnelling probability, resulting in decrease of the reverse leakage current by 80% at −10 V without deterioration of any forward electrical properties of LEDs.
References
-
-
1)
-
E.F. Schubert
.
(2003)
Light-emitting diodes.
-
2)
-
H.S. Venugopalan ,
A. DiCarlo ,
X. Gao ,
S. Libon ,
B.S. Shelton ,
E. Stefanov ,
T. Zhang ,
I. Eliashevich ,
S.E. Weaver ,
M. Hsing ,
B. Kolodin ,
T. Soules ,
D. Florescu ,
S. Guo ,
M. Pophristic ,
B. Peres
.
Ultra-violet nitride LED fabrication for high-flux white LED.
Proc. SPIE
,
195 -
202
-
3)
-
X.A. Cao ,
E.B. Stokes ,
P.M. Sandvik ,
S.F. LeBoeuf ,
J. Kretchmer ,
D. Walker
.
Diffusion and tunnelling currents in GaN/InGaN multiple quantum well light-emitting diodes.
IEEE Electron. Device Lett.
,
9 ,
535 -
537
-
4)
-
P.G. Eliseev ,
P. Perlin ,
J. Furioli ,
P. Sartori ,
J. Mu ,
M. Osiński
.
Tunneling current and electroluminescence in InGaN:Zn,Si/AIGaN/GaN blue light emitting diodes.
J. Electron. Mater.
,
3 ,
311 -
319
-
5)
-
E.J. Miller ,
E.T. Yu ,
P. Waltereit ,
J.S. Speck
.
Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy.
Appl. Phys. Lett.
,
4 ,
535 -
537
-
6)
-
T. Yanagisawa
.
Estimation of the degradation of InGaN/AlGaN blue light-emitting diodes.
Microelectron. Reliab.
,
8 ,
1239 -
1241
-
7)
-
S.R. Forrest ,
M. Didomenico ,
R.G. Smith ,
H.J. Stocker
.
Evidence for tunnelling in reverse-biased III-V photodetector diodes.
Appl. Phys. Lett.
,
7 ,
580 -
582
-
8)
-
M.-H. Kim ,
M.F. Schubert ,
Q. Dai ,
J.K. Kim ,
E.F. Schubert ,
J. Piprek ,
Y. Park
.
Origin of efficiency droop in GaN-based light-emitting diodes.
Appl. Phys. Lett.
,
18
-
9)
-
H. Kim ,
J. Cho ,
Y. Park ,
T.-Y. Seong
.
Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts.
Appl. Phys. Lett.
,
9
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