Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© National Research Council of Canada
Published
Errata or comment

AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon 〈111〉 substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon 〈111〉 substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.

Inspec keywords: high electron mobility transistors; III-V semiconductors; substrates; wide band gap semiconductors; semiconductor growth; aluminium compounds; gallium compounds; MOSFET

Other keywords: MOS; monolithic integration; AlGaN-GaN; differential heteroepitaxy technique; silicon substrates; HFET

Subjects: Thin film growth and epitaxy; Other field effect devices; Insulated gate field effect transistors

References

    1. 1)
      • J.A. Bardwell , S. Haffouz , A. Kochtane , T. Lester , C. Storey , H. Tang . AIGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates. Electron. Lett. , 22 , 1230 - 123
    2. 2)
      • M. Germain . IMEC enlarges nitride epiwafers. Compound Semicond. , 23 - 25
    3. 3)
      • J.W. Chung , J.-K. Lee , E.L. Piner , T. Palacios . Seamless on-wafer integration of Si(100) MOSFETs and GaN HEMTs. IEEE Electron Device Lett. , 10 , 1015 - 1017
    4. 4)
      • P. Chyurlia , F. Semond , T. Lester , N.G. Tarr . Windowed growth of AlGaN/GaN heterostructures on silicon 〈111〉 substrates for future MOS integration. Phys. Status Solidi A , 2 , 371 - 374
    5. 5)
      • Matsunaga, K., Tanomura, M., Nakayama, T.: `Analogue dynamic supply voltage L-band GaN high power amplifier with improvement on efficiency and linearity', Microwave Symposium 2007. IEEE/MTT-S International, June 2007, Honolulu, HI, USA, p. 1107–1110.
    6. 6)
      • Y. Cordier , J.-C. Moreno , F. Semond . Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si(110). IEEE Electron Device Lett. , 1187 - 1189
    7. 7)
      • M. Faucher , B. Grimbert , D. Theron . Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators. Appl. Phys. Lett. , 23
    8. 8)
      • M.A. Miller , S.E. Mohney . V/Al/V/Ag ohmic contacts to n- AlGaN/GaN heterostructures with a thin GaN cap. Appl. Phys. Lett. , 1
    9. 9)
      • E. Kasper , H.J. Herzog , K. Woerner . Monolithic integration using differential Si-MBE. J. Cryst. Growth , 458 - 462
    10. 10)
      • S.J. Pearton , B.S. Kang , S.N.G. Chu . GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys., Condens. Matter , R961 - R994
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.3167
Loading

Related content

content/journals/10.1049/el.2010.3167
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
New chip off the silicon block
Print this page
This is a required field
Please enter a valid email address