Scaling properties of In0.7Ga0.3As buried-channel MOSFETs with atomic layer deposited gate dielectric

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Scaling properties of In0.7Ga0.3As buried-channel MOSFETs with atomic layer deposited gate dielectric

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Published

Deep-submicron In0.7Ga0.3As buried-channel MOSFETs with various gate lengths down to 40 nm are demonstrated. In0.7Ga0.3As buried-channel MOSFETs were fabricated on an epitaxial wafer using an InP/In0.52Al0.48As double barrier. The device characteristics were analysed, including subthreshold swing, transconductance and drive current. Good scaling behaviour was observed for these III–V MOSFETs. For a 40 nm gate length device, the VT roll-off is around 100 mV, the subthreshold swing is 132 mV/dec and DIBL is 214 mV/V.

Inspec keywords: indium compounds; gallium arsenide; III-V semiconductors; MOSFET; nanotechnology; buried layers; atomic layer epitaxial growth

Other keywords: double barrier; ALD gate dielectric; scaling property; InP-In0.52Al0.48As; drive current; buried-channel MOSFET; epitaxial wafer; transconductance; subthreshold swing; In0.7Ga0.3As

Subjects: Nanometre-scale semiconductor fabrication technology; Insulated gate field effect transistors; Semiconductor doping

References

    1. 1)
      • Sun, Y.: `Scaling of In0.7Ga0.3As buried-channel MOSEFETs', IEDM Tech. Dig, 2008, San Francisco, CA, USA, p. 367.
    2. 2)
    3. 3)
      • H. Zhao . Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors. Appl. Phys. Lett
    4. 4)
      • Kim, D.H.: `30 nm E-mode InAs PHEMTs for THz and future logic applications', IEDM Tech. Dig, 2008, San Francisco, CA, USA, p. 719.
    5. 5)
      • Passlack, M.: `High mobility III–V MOSFETs for RF and digital applications', Tech. Dig. Int. Electron Devices Meeting, 2007, Washington, DC, USA, p. p. 621.
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