LDMOSFET with dielectric modulated drift region

R.Y. Su; P.Y. Chiang; J. Gong

LDMOSFET with dielectric modulated drift region

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LDMOSFET with dielectric modulated drift region

Author(s): R.Y. Su ; P.Y. Chiang ; J. Gong
DOI: 10.1049/el.2010.2720

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Author(s): R.Y. Su ¹ ; P.Y. Chiang ¹ ; J. Gong ¹
- Affiliations: 1: National Tsing Hua University, HsinChu, Taiwan
Source: Volume 46, Issue 6, 18 March 2010, p. 447 – 448
DOI: 10.1049/el.2010.2720 , Print ISSN 0013-5194, Online ISSN 1350-911X

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The properties of LDMOSFETs with dielectric material (several pieces of STI) being inserted into the drift region of the transistor to modulate the one-dimensional electric field distribution are demonstrated. Although this structure increases the turn-on resistance slightly, it also increases the breakdown voltage (BV) by a larger percentage. Systematic experimental results verify that the breakdown voltage of this device can be tuned by varying the dielectric width.

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