LDMOSFET with dielectric modulated drift region

LDMOSFET with dielectric modulated drift region

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The properties of LDMOSFETs with dielectric material (several pieces of STI) being inserted into the drift region of the transistor to modulate the one-dimensional electric field distribution are demonstrated. Although this structure increases the turn-on resistance slightly, it also increases the breakdown voltage (BV) by a larger percentage. Systematic experimental results verify that the breakdown voltage of this device can be tuned by varying the dielectric width.


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