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Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 µm RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.
Inspec keywords: radiofrequency integrated circuits; rectifiers; electrostatic discharge; integrated circuit layout; silicon; CMOS integrated circuits
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Subjects: Microwave integrated circuits; Power electronics, supply and supervisory circuits; Electrostatics; Semiconductor integrated circuit design, layout, modelling and testing; CMOS integrated circuits