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Complementation SCR for RF IC ESD protection

Complementation SCR for RF IC ESD protection

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Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 µm RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.

References

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      • Y. Shan , J. He , B. Hu . PLDD/NHALO-assisted low-trigger SCR for high-voltage tolerant ESD protection in foundry CMOS process without extra mask. Electron. Lett. , 1 , 40 - 42
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      • M.D. Ker . Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI. IEEE Trans. Electron Devices , 1 , 173 - 183
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      • M.D. Ker , C.Y. Lin . Low-capacitance SCR with waffle layout structure for on-chip ESD protection in RF ICs. IEEE Trans. Microw. Theory Tech. , 5 , 1286 - 1294
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      • Di Sarro, J., Chatty, K., Gauthier, R., Rosenbaum, E.: `Evaluation of SCR-based ESD protection devices in 90 nm and 65 nm CMOS technologies', 45thIEEE Int. Annual Physics Symp., 2007, Phoenix, AZ, USA, p. 348–357.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.2567
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