http://iet.metastore.ingenta.com
1887

Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156×156 mm2) solar-cell industry. The best efficiency of 16.35% is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88% absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48% absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.

References

    1. 1)
      • M.J. Kerr , J. Schmidt , H. Cuevas . Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. J. Appl. Phys. , 7 , 3821 - 3826
    2. 2)
      • Bařinka, R., Köhler, I., Stockum, W., Meijer, A., Doll, O., Čech, P., Bařinková, P., Klumpler, A., Hladík, J.: `Advanced selective emitter solar cell process with use of screen-printable etching paste', Proc. 23rd EPVSEC, 2008, Spain, p. 1760–1763.
    3. 3)
      • Jäger, U., Okanovic, M., Hörteis, M., Grohe, A., Preu, R.: `Selective emitter by laser doping from phosphorsilicate glass', Proc. 24th EPVSEC, 2009, Germany, p. 1740–1743.
    4. 4)
      • J. Szlufcik , H.E. Elgamel , M. Ghannam , J. Nijs , R. Met-tens . Simple integral screen printing process for selective emitter polycrystalline silicon solar cells. Appl. Phys. Lett. , 1583 - 1584
    5. 5)
      • Y.-T. Cheng , J.-J. Ho , W. Lee , S.-Y. Tsai , Y.-A. Lu , J.-J. Liou , S.-H. Chang , K.L. Wang . Investigation of low-cost surface processing techniques for large-size multicrystalline silicon solar cells. Int. J. Photoenergy , 1 - 6
    6. 6)
      • H. Boubekeur , M. Boumaour . Impact of lateral junction on selective emitter solar cell performance. Sol. Energy Mater. Sol. Cells , 7 - 15
    7. 7)
      • Abbott, M., Cousins, , Chen, P., , F., Cotter, J.: `Laser-induced defects in crystalline silicon solar cells', Proc. Photovoltaic Specialists Conf., 2005, p. 1241–1244, FL, USA.
    8. 8)
      • P. Engelhart , S. Hermann , T. Neubert , H. Plagwitz , R. Grischke , R. Meyer , U. Klug , A. Schoonderbeek , U. Stute , R. Brendel . Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses. Prog. Photovolt. Res. Appl. , 521 - 527
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.2471
Loading

Related content

content/journals/10.1049/el.2010.2471
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
An opening for solar cells
This is a required field
Please enter a valid email address