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Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes

Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes

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The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.

References

    1. 1)
      • H. Kim , S.J. Park , H. Hwang . Effect of current spreading on the performance of GaN-based light-emitting diodes. IEEE Trans. Electron Devices , 6 , 1065 - 1069
    2. 2)
      • H.S. Kim , J.M. Lee , C. Huh , S.W. Kim , D.J. Kim , S.J. Park , H.S. Hwang . Modeling of a GaN-based light-emitting diode for uniform current spreading. Appl. Phys. Lett. , 1903 - 1904
    3. 3)
      • X. Guo , E.F. Schubert . Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates. Appl. Phys. Lett. , 3337 - 3339
    4. 4)
      • S.M. Hwang , J.I. Shim . A method for current spreading analysis and electrode pattern design in light-emitting diodes. IEEE Trans. Electron Devices , 5 , 1123 - 1128
    5. 5)
    6. 6)
      • Y.Z. Chiou . The effect of electrode layout on nitride-based light-emitting diodes. IEEE Trans. Device Mater. Reliab. , 4 , 647 - 651
    7. 7)
      • J. Piprek . (2003) Semiconductor optoelectronic device.
    8. 8)
      • S. Figge , T. Bottcher , D. Hommel , C. Zellweger , M. Ilegems . Heat generation and dissipation in GaN-based light emitting diode. Phys. Stat. Sol.(A) , 1 , 83 - 86
    9. 9)
      • J.S. Yoon , J.I. Shim , D.S. Shin . Enhancing current spreading by a simple electrode pattern design methodology in lateral GaN/InGaN LEDs. Electron. Lett. , 13 , 703 - 705
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