Quantum-dot external-cavity passively modelocked laser with high peak power and pulse energy

Quantum-dot external-cavity passively modelocked laser with high peak power and pulse energy

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An InAs quantum-dot external-cavity passively modelocked laser with an operation wavelength of 1.27 µm is demonstrated, based on a two-section quantum-dot superluminescent diode with bending ridge waveguide and a 96% output coupler. Stable modelocking with an average power up to 60 mW was obtained at a repetition frequency of 2.4 GHz. This performance corresponds to a 25 pJ pulse energy obtained directly from the oscillator, which represents a 55-fold increase in pulse energy when compared to the current state-of-the-art for semiconductor lasers. At a repetition frequency of 1.14 GHz, picosecond optical pulses with 1.5 W peak power are also demonstrated, representing the highest peak power achieved from an external-cavity laser at the 1.3 µm waveband, without the use of any pulse compression or optical amplification.


    1. 1)
      • M. Kuramoto , N. Kitajima , H. Guo , Y. Furushima , M. Ikeda , H. Yokoyama . Two-photon fluorescence bioimaging with an all-semiconductor laser picoseconds pulse source. Opt. Lett.
    2. 2)
      • J. Kim , P.J. Delfyett . Interband optical pulse injection locking of quantum dot modelocked semiconductor laser. Opt. Express
    3. 3)
      • M.G. Thompson , A. Rae , M. Xia , R.V. Penty , I.H. White . InGaAs quantum-dot modelocked laser diodes. IEEE J. Sel. Top. Quantum Electron. , 661 - 672
    4. 4)
      • E.U. Rafailov , M.A. Cataluna , W. Sibbett . Mode-locked quantum-dot lasers. Nature Photonics , 395 - 401
    5. 5)
    6. 6)
    7. 7)
      • M.T. Choi , W. Lee , J.M. Kim , P.J. Delfyett . Ultrashort, high-power pulse generation from a master oscillator power amplifier based on external cavity mode locking of a quantum-dot two-section diode laser. Appl. Phys. Lett.
    8. 8)
      • Xia, M., Thompson, M.G., Penty, R.V., White, I.H.: `External-cavity mode-locked quantum-dot lasers for low repetition rate, sub-picosecond pulse generation', Conf. on Quantum Electronics and Laser Science, May 2008, San Jose, CA, USA, p. 1137–1138.
    9. 9)
      • A.D. McRobbie , M.A. Cataluna , S.A. Zolotovskaya , D.A. Livshits , W. Sibbett , E.U. Rafailov . High power all-quantum-dot-based external cavity modelocked laser. Electron. Lett. , 812 - 813
    10. 10)

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