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Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

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Direct current characteristics of an InGaP/InGaAs pseudomorphic HFET employing low-to-high double doping channels are first demonstrated and compared with the conventional single doping-channel device. Because the lower InGaAs channel is heavily doped and two-dimensional electron gas is formed in this channel, the threshold voltage is extended to −3.7 V. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing up to 4.5 V is achieved in the studied device, which is greater than that of 3.85 V in the single doping-channel device.

References

    1. 1)
      • S.S. Lu , C.C. Meng , Y.S. Lin , H. Lan . The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga0.8As doped-channel FET's. IEEE Trans. Electron Devices , 48 - 54
    2. 2)
    3. 3)
      • K.H. Su , W.C. Hsu , C.S. Lee , P.J. Hu , Y.H. Wu , L. Chang , R.S. Hsiao , J.F. Chen , T.W. Chi . Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor. Semicond. Sci. Technol.
    4. 4)
      • J.H. Tsai , K.P. Zhu , S.Y. Chiu , Y.C. Chu . High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure. J. Vacuum Sci. Technol. B , 2314 - 2318
    5. 5)
      • I. Takenaka , K. Ishikura , H. Takahashi , K. Asano , J. Morikawa , K. Satou , K. Kishi , K. Hasegawa , K. Tokunaga , F. Emori , M. Kuzuhara . L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations. IEEE J. Solid-State Circuits , 1181 - 1187
    6. 6)
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