Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

Access Full Text

Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Engineering and Technology
Published

Direct current characteristics of an InGaP/InGaAs pseudomorphic HFET employing low-to-high double doping channels are first demonstrated and compared with the conventional single doping-channel device. Because the lower InGaAs channel is heavily doped and two-dimensional electron gas is formed in this channel, the threshold voltage is extended to −3.7 V. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing up to 4.5 V is achieved in the studied device, which is greater than that of 3.85 V in the single doping-channel device.

Inspec keywords: high electron mobility transistors; gallium compounds; indium compounds; III-V semiconductors; semiconductor doping

Other keywords: direct current characteristic; threshold voltage; InGaP-InGaAs; low-to-high double doping channel; gate voltage swing enhancement; pseudomorphic HFET; two-dimensional electron gas

Subjects: Semiconductor doping; II-VI and III-V semiconductors; Other field effect devices

References

    1. 1)
      • S.S. Lu , C.C. Meng , Y.S. Lin , H. Lan . The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga0.8As doped-channel FET's. IEEE Trans. Electron Devices , 48 - 54
    2. 2)
    3. 3)
      • K.H. Su , W.C. Hsu , C.S. Lee , P.J. Hu , Y.H. Wu , L. Chang , R.S. Hsiao , J.F. Chen , T.W. Chi . Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor. Semicond. Sci. Technol.
    4. 4)
      • J.H. Tsai , K.P. Zhu , S.Y. Chiu , Y.C. Chu . High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure. J. Vacuum Sci. Technol. B , 2314 - 2318
    5. 5)
      • I. Takenaka , K. Ishikura , H. Takahashi , K. Asano , J. Morikawa , K. Satou , K. Kishi , K. Hasegawa , K. Tokunaga , F. Emori , M. Kuzuhara . L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations. IEEE J. Solid-State Circuits , 1181 - 1187
    6. 6)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.2078
Loading

Related content

content/journals/10.1049/el.2010.2078
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading