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Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

Gate voltage swing enhancement of InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels

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Direct current characteristics of an InGaP/InGaAs pseudomorphic HFET employing low-to-high double doping channels are first demonstrated and compared with the conventional single doping-channel device. Because the lower InGaAs channel is heavily doped and two-dimensional electron gas is formed in this channel, the threshold voltage is extended to −3.7 V. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing up to 4.5 V is achieved in the studied device, which is greater than that of 3.85 V in the single doping-channel device.


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