© The Institution of Engineering and Technology
A fully integrated Q-band 4-bit MMIC phase shifter with InGaAs pin diodes has been designed and fabricated. To achieve low insertion loss and good phase shifting characteristics at Q-band frequencies, topology based on a switched transmission line is employed using a thin-film microstrip line structure implemented in the MMIC fabrication process. The fabricated phase shifter has demonstrated good performance such as an insertion loss of less than 6.1 dB in the frequency range 46–49 GHz with a small intrinsic chip size of 2.48×0.87 mm. The results show the best insertion loss characteristic among the switched transmission-line type phase shifters reported at Ka- and Q-band frequencies.
References
-
-
1)
-
Yang, J.G., Eom, H., Choi, S., Yang, K.: `2–38 GHz broadband compact InGaAs ', IEE, Int. Conf. on Indium Phosphide & Related Materials, Matsue, Japan, 2007, p. 542–545.
-
2)
-
Yonghong, Z., Zhenghe, F., Yong, F.: `Ka-band 4-bit phase shifter with low phase deviation', IEEE Int. Conf. on Microwave and Millimeter Wave Technology, Beijing, China, 2004, p. 382–385.
-
3)
-
K. Maruhashi ,
H. Mizutani ,
K. Ohata
.
Design and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches.
IEEE Trans. Microw. Theory Tech.
,
8 ,
1313 -
1317
-
4)
-
D.-W. Kang ,
H.D. Lee ,
C.-H. Kim ,
S. Hong
.
Ku-band MMIC phase shifter using a parallel resonator with 0.18-µm CMOS technology.
IEEE Trans. Microw. Theory Tech.
,
1 ,
294 -
301
-
5)
-
M. Aust ,
H. Wang ,
R. Carandang ,
K. Tan ,
C.H. Chen ,
T. Trinh ,
R. Esfandiari ,
H.C. Yen
.
GaAs monolithic components development for Q-band phased array application.
IEEE MTT-S Int. Microw. Symp. Dig.
,
703 -
706
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.2007
Related content
content/journals/10.1049/el.2010.2007
pub_keyword,iet_inspecKeyword,pub_concept
6
6