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Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes

Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes

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A fully integrated Q-band 4-bit MMIC phase shifter with InGaAs pin diodes has been designed and fabricated. To achieve low insertion loss and good phase shifting characteristics at Q-band frequencies, topology based on a switched transmission line is employed using a thin-film microstrip line structure implemented in the MMIC fabrication process. The fabricated phase shifter has demonstrated good performance such as an insertion loss of less than 6.1 dB in the frequency range 46–49 GHz with a small intrinsic chip size of 2.48×0.87 mm. The results show the best insertion loss characteristic among the switched transmission-line type phase shifters reported at Ka- and Q-band frequencies.

References

    1. 1)
      • Ku-band MMIC phase shifter using a parallel resonator with 0.18-µm CMOS technology
    2. 2)
      • Design and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches
    3. 3)
      • Yonghong, Z., Zhenghe, F., Yong, F.: `Ka-band 4-bit phase shifter with low phase deviation', IEEE Int. Conf. on Microwave and Millimeter Wave Technology, Beijing, China, 2004, p. 382–385
    4. 4)
      • GaAs monolithic components development for Q-band phased array application
    5. 5)
      • Yang, J.G., Eom, H., Choi, S., Yang, K.: `2–38 GHz broadband compact InGaAs ', IEE, Int. Conf. on Indium Phosphide & Related Materials, Matsue, Japan, 2007, p. 542–545
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.2007
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