Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes

Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A fully integrated Q-band 4-bit MMIC phase shifter with InGaAs pin diodes has been designed and fabricated. To achieve low insertion loss and good phase shifting characteristics at Q-band frequencies, topology based on a switched transmission line is employed using a thin-film microstrip line structure implemented in the MMIC fabrication process. The fabricated phase shifter has demonstrated good performance such as an insertion loss of less than 6.1 dB in the frequency range 46–49 GHz with a small intrinsic chip size of 2.48×0.87 mm. The results show the best insertion loss characteristic among the switched transmission-line type phase shifters reported at Ka- and Q-band frequencies.


    1. 1)
      • D.-W. Kang , H.D. Lee , C.-H. Kim , S. Hong . Ku-band MMIC phase shifter using a parallel resonator with 0.18-µm CMOS technology. IEEE Trans. Microw. Theory Tech. , 1 , 294 - 301
    2. 2)
      • K. Maruhashi , H. Mizutani , K. Ohata . Design and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches. IEEE Trans. Microw. Theory Tech. , 8 , 1313 - 1317
    3. 3)
      • Yonghong, Z., Zhenghe, F., Yong, F.: `Ka-band 4-bit phase shifter with low phase deviation', IEEE Int. Conf. on Microwave and Millimeter Wave Technology, Beijing, China, 2004, p. 382–385.
    4. 4)
      • M. Aust , H. Wang , R. Carandang , K. Tan , C.H. Chen , T. Trinh , R. Esfandiari , H.C. Yen . GaAs monolithic components development for Q-band phased array application. IEEE MTT-S Int. Microw. Symp. Dig. , 703 - 706
    5. 5)
      • Yang, J.G., Eom, H., Choi, S., Yang, K.: `2–38 GHz broadband compact InGaAs ', IEE, Int. Conf. on Indium Phosphide & Related Materials, Matsue, Japan, 2007, p. 542–545.

Related content

This is a required field
Please enter a valid email address