Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate
Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate
- Author(s): J. Park ; K. Lee ; H.-Y. Cha ; K. Seo
- DOI: 10.1049/el.2010.1485
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- Author(s): J. Park 1 ; K. Lee 1 ; H.-Y. Cha 2 ; K. Seo 1
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View affiliations
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Affiliations:
1: Department of Electrical Engineering, Seoul National University, Seoul, Republic of Korea
2: School of Electronic and Electrical Engineering, Hongik University, Seoul, Republic of Korea
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Affiliations:
1: Department of Electrical Engineering, Seoul National University, Seoul, Republic of Korea
- Source:
Volume 46, Issue 14,
8 July 2010,
p.
1011 – 1012
DOI: 10.1049/el.2010.1485 , Print ISSN 0013-5194, Online ISSN 1350-911X
Thermal reliability of nickel (Ni) and copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Though the current-voltage characteristics of as-deposited Cu gate AlGaN/GaN HEMTs is superior to those of Ni gate AlGaN/GaN HEMTs, severe degradation was observed after aging at 220°C. This instability problem should be carefully taken into account in practical applications of Cu gate AlGaN/GaN HEMTs.
Inspec keywords: reliability; aluminium compounds; substrates; wide band gap semiconductors; gallium compounds; silicon; high electron mobility transistors
Other keywords:
Subjects: Other field effect devices; Reliability
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