Low-frequency voltage mode sensing of magnetoelectric sensor in package

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Low-frequency voltage mode sensing of magnetoelectric sensor in package

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An in-package voltage-sensing integrated magnetometer for low frequency neural recording at room temperature is presented. The detection system consists of a voltage mode CMOS amplifier with an active biasing circuit and a Metglas/Polyvinylidene fluoride (PVDF)-based magnetoelectric (ME) unimorph sensor measuring 10×3×0.025 mm in volume, representing the smallest ME sensor volume reported to date. Over the frequency range of interest (0.5 Hz–1 kHz), both theories and experiments are in excellent agreement and the fabricated magnetometer exhibits a frequency independent signal-to-noise ratio (SNR) at the system level. The magnetometer achieves a SNR of 3000 and detects a minimum detectable field of 30 nano-Tesla waveform. This system in package provides a feasibility demonstration of integration of ME sensors directly with NMOS readout electronics aimed at tiny magnetic field detection for bio-imaging applications.

Inspec keywords: amplifiers; CMOS analogue integrated circuits; magnetic sensors; MOS integrated circuits; readout electronics; magnetoelectric effects; magnetometers

Other keywords: in-package voltage-sensing integrated magnetometer; voltage mode CMOS amplifier; magnetometer; magnetoelectric sensor; NMOS readout electronics; Metglas; low frequency neural recording; magnetoelectric magnetoelectric; signal-to-noise ratio; low-frequency voltage mode sensing; polyvinylidene fluoride; active biasing circuit; bioimaging applications; magnetic field detection

Subjects: CMOS integrated circuits; Sensing devices and transducers; Magnetic instruments and techniques; Amplifiers

References

    1. 1)
      • B. Razavi . (2002) Design of analog CMOS integrated circuits.
    2. 2)
      • F. Li , S. Lee , Z. Fang , P. Majhi , Q. Zhang , S.K. Banerjee , S. Datta . Flicker noise improvement in 100 nm Lg Si0.50Ge0.50 strained quantum-well transistors using ultra-thin Si cap layer. IEEE Electron Device Lett. , 1 , 47 - 49
    3. 3)
      • Z. Xing , J. Li , D. Viehland . Noise and scale effects on the signal-to-noise ratio in magnetoelectric laminate sensor/detection units. Appl. Phys. Lett. , 18
    4. 4)
      • Z.P. Xing , J.Y. Zhai , S.X. Dong , J.F. Li , D. Viehland , W.G. Odendaal . Modeling and detection of quasi-static nanotesla magnetic field variations using magnetoelectric laminate sensors. Meas. Sci. Technol.
    5. 5)
      • C.W. Nan , M.I. Bichurin , S.X. Dong , D. Viehland , G. Srinivasan . Multiferroic magnetoelectric composites: historical perspective, status, and future directions. J. Appl. Phys. , 3
    6. 6)
      • Z. Fang , S.G. Lu , F. Li , S. Datta , Q.M. Zhang , M. El Tahchi . Enhancing the magnetoelectric response of Metglas/polyvinylidene fluoride laminates by exploiting the flux concentration effect. Appl. Phys. Lett. , 11
    7. 7)
      • Z. Xing , J. Li , D. Viehland . Modeling and the signal-to-noise ratio research of magnetoelectric sensors at low frequency. Appl. Phys. Lett. , 14
    8. 8)
      • J. Zhai , Z. Xing , S. Dong , J. Li , D. Viehland . Detection of pico-Tesla magnetic fields using magneto-electric sensors at room temperature. Appl. Phys. Lett. , 6
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.1336
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