GaN on Si HEMT with 65% power added efficiency at 10 GHz

GaN on Si HEMT with 65% power added efficiency at 10 GHz

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A 65% power added efficiency (PAE) at 10 GHz for a AlGaN/GaN high electron mobility transistor on silicon substrate is presented. This PAE is achieved with an associated output power of 6.1 W/mm and an associated gain of 13.1 dB for a 400 µm gate-width transistor biased at 40 V drain voltage. Epitaxial AlGaN/GaN layers are grown on 4-inch silicon substrate. Nitride defined 0.25 µm T-gate process, which allows formation of an integrated field plate, is used for these devices. A source-connected second field plate is also implemented to improve device performance at high operation voltage.


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      • S. Hoshi , I. Masanori , T. Marui , H. Okita , Y. Morino , I. Tamai , F. Toda , S. Seki , T. Egawa . 12.88 W/mm GaN high electron mobility transistor on silicon substrate for high voltage operation. Appl. Phys. Express , 1 - 3
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      • Saunier, P., Lee, C., Balistreri, A., Dumka, D.C., Jimenez, J., Tserng, H.Q., Kao, M.Y., Chao, P.C., Chu, K., Souzis, A., Eliashevich, I., Guo, S., del Alamo, J., Joh, J., Shur, M.: `Progress in GaN performances and reliability', IEEE Device Research Conf., 2007, South Bend, IN, USA, p. 35–36.

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