Ultra-broad bandwidth and low-loss GCPW-MS transitions on low-k substrates
Ultra-broad bandwidth and low-loss GCPW-MS transitions on low-k substrates
- Author(s): M. El-Gibari ; D. Averty ; C. Lupi ; M. Brunet ; H. Li ; S. Toutain
- DOI: 10.1049/el.2010.0986
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- Author(s): M. El-Gibari 1 ; D. Averty 1 ; C. Lupi 1 ; M. Brunet 1 ; H. Li 1 ; S. Toutain 1
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View affiliations
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Affiliations:
1: Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), Université de Nantes, Nantes cedex 3, France
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Affiliations:
1: Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), Université de Nantes, Nantes cedex 3, France
- Source:
Volume 46, Issue 13,
24 June 2010,
p.
931 – 933
DOI: 10.1049/el.2010.0986 , Print ISSN 0013-5194, Online ISSN 1350-911X
A study of back-to-back grounded coplanar waveguide-microstrip (GCPW-MS) transitions is presented. By using low-permittivity substrates, both the attenuation and the bandwidth can be improved. An ultra-broad bandwidth up to 77 GHz could be obtained with the BCB polymer as substrate in thin film on low-resistivity silicon wafers.
Inspec keywords: coplanar waveguides; electrical resistivity; microstrip transitions; permittivity
Other keywords: ultra-broad bandwidth; thin film substrate; grounded coplanar waveguide-microstrip transitions; low-permittivity substrate; BCB polymer; attenuation; low-loss GCPW-MS transition; GCPW-MS transitions; low-resistivity silicon wafer; low-k substrate
Subjects: Dielectric materials and properties; Waveguides and microwave transmission lines; Waveguide and microwave transmission line components
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