Suppression of space charge effect in MIC-PD using composite field structure
Suppression of space charge effect in MIC-PD using composite field structure
- Author(s): T. Yoshimatsu ; Y. Muramoto ; S. Kodama ; T. Furuta ; N. Shigekawa ; H. Yokoyama ; T. Ishibashi
- DOI: 10.1049/el.2010.0964
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- Author(s): T. Yoshimatsu 1 ; Y. Muramoto 1 ; S. Kodama 1 ; T. Furuta 1 ; N. Shigekawa 1 ; H. Yokoyama 1 ; T. Ishibashi 2
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View affiliations
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Affiliations:
1: NTT Photonics Laboratories, NTT Corporation, Atsugi, Japan
2: NTT Photonics Laboratories, NTT Electronics Corporation, Atsugi, Japan
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Affiliations:
1: NTT Photonics Laboratories, NTT Corporation, Atsugi, Japan
- Source:
Volume 46, Issue 13,
24 June 2010,
p.
941 – 943
DOI: 10.1049/el.2010.0964 , Print ISSN 0013-5194, Online ISSN 1350-911X
A maximised induced current photodiode with a novel composite field structure that suppresses the space charge effect achieved a 2 V bias operation for an average photocurrent of 4 mA with a 3 dB bandwidth of over 35 GHz.
Inspec keywords: photoemission; photodiodes; photoconductivity; space charge
Other keywords:
Subjects: Photoconducting materials and properties; Photoelectric devices; Electric discharges; Photoconduction and photovoltaic effects; photodielectric effects
References
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1)
- T. Ishibashi , N. Shimizu , S. Kodama , H. Ito , T. Nagatsuma , T. Furuta . (1997) Uni-traveling-carrier photodiodes.
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2)
- Yoshimatsu, T., Muramoto, Y., Kodama, S., Furuta, T., Shigekawa, N., Yokoyama, H., Ishibashi, T.: `Composite-field MIC-PDs for low-bias-voltage operation', To be presented at the 22nd Int. Conf. on Indium Phosphide and Related Materials, June 2010, Takamatsu, Japan, ThA2-5.
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3)
- Wakatsuki, A., Furuta, T., Muramoto, Y., Yoshimatsu, T., Ito, H.: `High-power and broadband sub-terahertz wave generation using a J-band photomixer module with rectangular-waveguide output port', Proc. Int. Conf. on Infrared, Millimeter and Terahertz Waves, September 2008, Pasadena, CA, USA, p. 1199, M4K2.
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4)
- K.J. Williams , R.D. Esman . Design considerations for high-current photodetectors. J. Lightwave Technol. , 8 , 1443 - 1454
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5)
- Y. Muramoto , T. Ishibashi . InP/InGaAs pin photodiode structure maximising bandwidth and efficiency. Electron. Lett.
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