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Chip implementation with combined temperature sensor and reference devices based on DZTC principle

Chip implementation with combined temperature sensor and reference devices based on DZTC principle

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A CMOS temperature sensor design to improve the sensitivity and linearity of the authors' previous work is presented. Based on the principle of double zero temperature coefficient (DZTC) points, a combined device is fabricated using 0.35 µm CMOS process with two voltage references, one current reference, and one temperature sensor. From −20 to 120°C, two voltage references provide temperature-stable outputs of 823±0.2 and 1265±8.9 mV, and the current reference gives 23.5±1.2 µA. The temperature sensor has good sensitivity of 9.55 mV/°C better than the previous design by 4.15 times, and high linearity of 97%.

References

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      • H. Lakdawala , Y.W. Li , A. Raychowdhury , G. Taylor , K. Soumyanath . A 1.05 V 1.6 mw 0.45°C 3σ resolution ΣΔ based temperature sensor with parasitic resistance compensation in 32 nm digital CMOS process. IEEE J. Solid-State Circuits , 12 , 3621 - 3630
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      • Najafizadeh, L., Filanovsky, I.M.: `A simple voltage reference using transistor with ZTC point and PTAT current source', Proc. IEEE ISCAS’04, May 2004, Vancouver, BC, Canada, 1, p. 23–26.
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      • C.P. Liu , H.P. Huang . Experimental validation of PTAT for in situ temperature sensor and voltage reference. Electron. Lett. , 17 , 1016 - 1017
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.0839
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