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Speed enhancement of VCSELs by photon lifetime reduction

Speed enhancement of VCSELs by photon lifetime reduction

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The dependence of the performance of high-speed 850 nm vertical cavity surface-emitting lasers (VCSELs) on photon lifetime is investigated. The photon lifetime is controlled by shallow surface etching. It is demonstrated that a reduction of photon lifetime by ∼50% leads to a significant improvement of efficiency and speed. A record high 3 dB bandwidth of 23 GHz is achieved.

Inspec keywords: laser cavity resonators; surface emitting lasers

Other keywords: photon lifetime reduction; vertical cavity surface-emitting lasers; shallow surface etching; speed enhancement; VCSEL

Subjects: Lasing action in semiconductors; Semiconductor lasers; Laser resonators and cavities; Design of specific laser systems; Laser resonators and cavities

References

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      • S.B. Healy , E.P. O'Reilly , J.S. Gustavsson , P. Westbergh , Å. Haglund , A. Larsson , A. Joel . Active region design for high-speed 850-nm VCSELs. IEEE J. Quantum Electron. , 506 - 512
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2010.0779
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Correspondence
This article has following corresponding article(s):
Bandwidth boost for 850 nm VCSELs
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