InSbN based p-n junctions for infrared photodetection

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InSbN based p-n junctions for infrared photodetection

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InSbN p-n junctions prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k·p model based on In-N bond.

Inspec keywords: energy gap; III-V semiconductors; indium alloys; photodetectors; ion implantation; p-n junctions; antimony alloys; wide band gap semiconductors; infrared detectors

Other keywords: infrared photodetection; alloy bandgaps; In-N bond; N+ implantation; detection wavelength; Mg+ implantation; peak wavelengths; p-n junctions; InSb wafers; wavelength infrared photodetection; implanted nitrogen monitoring

Subjects: Semiconductor doping; Photodetectors; Semiconductor junctions

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